| PART |
Description |
Maker |
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
| FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Infineon Technologies AG
|
| 2MBI100J-060 |
TRANSISTOR IGBT POWER MODULE
|
Fuji Semiconductors
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| 1MBI600LP060 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 600A I(C)
|
|
| VDI75-12S3 VID75-12S3 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展| 75A条一（c
|
Analog Devices, Inc.
|
| CM100DY12H |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 600V的五（巴西）国际消费电子展| 100号A一（c
|
Mitsubishi Electric, Corp.
|
| IEF21KA1 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 15A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1KV交五（巴西）国际消费电子展|5A一（c
|
TE Connectivity, Ltd.
|
| CM100DY24H |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 100号A一（c
|
Toshiba, Corp.
|
